Microwave load

ABSTRACT

A power amplifier (power amplifier) having multiple solid state sub-amplifiers connected in parallel between the power amplifier input and the power amplifier output are described. The signal input to the power amplifier is provided to an RF splitter connected between the power amplifier input connector and the input of each of the sub-amplifiers. The RF splitter splits the input power from the signal input and provides the power to the sub-amplifier inputs through input electrical paths. The input electrical paths from the power amplifier input to the sub-amplifiers are substantially physically identical. Each of the sub-amplifiers drive an input of an RF combiner connected between the outputs of the sub-amplifiers and the output of the power amplifier. The RF combiner combines the output power from each of the sub-amplifiers through output electrical paths, and provides the combined power to the power amplifier output. The output electrical paths from the sub-amplifiers to the power amplifier output are substantially physically identical.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. application entitled “Solid State RFPower Amplifier,” attorney docket KERAG.001A, U.S. application entitled“Flexible Microwave Transmission Line,” attorney docket KERAG.001A3,U.S. application entitled “Microwave Combiner/Splitter,” attorney docketKERAG.001A4, U.S. application entitled “Electrically ConductiveAttachment Device,” attorney docket KERAG.001A5, all of which are filedconcurrently herewith, and are incorporated by reference in theirentirety.

BACKGROUND

1. Field of the Invention

The field of the invention relates to radio frequency (RF) poweramplifiers, and more particularly to a high power, wideband microwave ormillimeterwave solid state RF power amplifier that will replacefunctions where tube type amplifiers have generally been the onlychoice. The invention relates to a high power, wideband solid stateamplifier in a small package that additionally solves the problems ofimproved efficiency and heat extraction from the amplifier housing.

2. Description of the Related Technology

Microwave and millimeterwave RF power amplifiers are used in variousapplications, such as in transmitters for communication systems.Transmitters typically process information to generate an RF signal at alow power and apply the low power signal to an RF power amplifier whichoutputs a high power RF signal. The high power RF signal can be appliedto an antenna which broadcasts the signal with the information to one ormore distant or local receivers, such as can be found in a radio.

Current solid state RF power amplifiers are limited in their ability toefficiently operate at microwave and millimeterwave frequencies, with awide bandwidth and at a high power. Thus, there is a need for improvedsolid state power amplifiers.

SUMMARY OF CERTAIN EMBODIMENTS

One embodiment is a transmission line component for an RF poweramplifier, including a flexible first substrate, and a first conductoron the first substrate. The first conductor is configured to provide aninsertion loss of less than about 0.2 dB when the flexible substrate hasa bend of about 90 degrees with a radius of curvature less than about ⅛inch.

Another embodiment is an RF power amplifier, including an RF inputconnection, an RF output connection, at least three sub-amplifiermodules, a plurality of input electrical paths connecting each of thesub-amplifier modules to the input connection. At least a portion ofeach of the plurality of input electrical paths collectively andsubstantially define an input path plane. The power amplifier alsoincludes a plurality of output electrical paths connecting each of thesub-amplifier modules to the output connection, where at least a portionof each of the plurality of output electrical paths collectively andsubstantially define an output path plane, and where the electricalpaths of at least one of the plurality of input electrical paths and theplurality of output electrical paths are substantially identical, and atleast one of the input connection and the output connection issubstantially parallel to at least one of the input path plane and theoutput path plane.

Another embodiment is an RF power amplifier, including an RF inputconnection, an RF output connection, and at least two substantiallyparallel sub-amplifier modules, where the RF input connection, and theRF output connection are substantially perpendicular to thesub-amplifier modules.

Another embodiment is a method of using an RF power amplifier. Themethod includes applying an RF input signal to the power amplifier in afirst direction, amplifying the power of the RF input signal in a seconddirection with a plurality of sub-amplifier modules within the poweramplifier so as to generate a power amplified RF output signal, wherethe second direction is substantially perpendicular to the firstdirection. The method also includes receiving the power amplified RFoutput signal from the power amplifier in a third direction, the thirddirection being substantially parallel to the first direction.

Another embodiment is an RF combiner including a plurality of RF inputsignal paths, at least one RF output signal path, where the outputsignal path and each of the plurality of input signal paths arepositioned substantially within a plane. The RF combiner also includes aplurality of sidewalls, where each input signal path is positionedbetween at least two sidewalls, and the sidewalls and the plurality ofinput signal paths are configured such that each of the input paths arephysically and electrically substantially identical.

Another embodiment is an RF combiner including a plurality of RF inputsignal paths, where the plurality of input signal paths includes ane-field compensator, configured to compensate for an input signal pathasymmetry.

Another embodiment is an RF combiner including a plurality of RF inputsignal paths, where the plurality of input signal paths includes acircular current spreader.

Another embodiment is an attachment device for an electrical componentincluding a threaded securing element configured to mechanically attacha first electrical component to a second electrical component, and afirst electrical conductor configured to provide an electricalconnection from the first electrical component to the second electricalcomponent.

Another embodiment is an RF power amplifier, including a housing, an RFinput connection on the housing, and an RF output connection on thehousing, where the input and output connections are substantially on thesame side of the housing.

Another embodiment is an RF load including a resistive material, andfirst and second terminals, each terminal including a curved interfaceto the resistive material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an embodiment of power amplifier.

FIGS. 2A and 2B are exploded perspective views of an example of a poweramplifier.

FIG. 3 is a perspective view of an embodiment of a combiner/splitter.

FIG. 4 is a schematic diagram of an example of one embodiment of asub-amplifier module.

FIGS. 5A and 5B are illustrations of perspective views of one embodimentof a flexible transmission line.

FIG. 5C is a diagram illustrating a connection between a transmissionline and the transmission line of FIGS. 5A and 5B.

FIG. 5D is a schematic diagram illustrating the matching network of theconnection of FIG. 5C.

FIG. 6 is a diagram showing a perspective view of one embodiment of acombined power amplifier having four power amplifiers.

FIG. 7 is a diagram showing an exploded perspective view of oneembodiment of a combined power amplifier 700 having four poweramplifiers.

FIG. 8 is a diagram showing a perspective view of an example of an RFload.

FIG. 9 is a diagram showing a perspective view of an example of anattachment device.

DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS

The following detailed description of certain embodiments presentsvarious descriptions of specific embodiments of the invention. However,the invention can be embodied in a multitude of different ways asdefined and covered by the claims. In this description, reference ismade to the drawings wherein like parts are designated with likenumerals throughout.

The terminology used in the description presented herein is not intendedto be interpreted in any limited or restrictive manner, simply becauseit is being utilized in conjunction with a detailed description ofcertain specific embodiments of the invention. Furthermore, embodimentsof the invention can include several novel features, no single one ofwhich is solely responsible for its desirable attributes or which isessential to practicing the inventions herein described.

Embodiments of a non-planar power amplifier having multiple solid statesub-amplifier modules connected in parallel between the power amplifierinput and the power amplifier output are described. Such poweramplifiers can be used in applications such as in transmitters forcommunication applications which output high power signals. Combinationsof these amplifiers can be placed together to provide outputs in thethousands of watts. The parallel arrangement provides desired poweramplification. The non-planar design allows for the signal paths betweenthe sub-amplifier modules and the input and the output of the poweramplifier to be substantially identical (e.g. same length, shape, width,thickness, surrounding structures, voltages, currents, electricalfields, and/or other characteristics). FIG. 1 is a block diagram of anembodiment of power amplifier 100. Power amplifier 100 includes anoptional pre-amp 110, which is an input driver amplifier, a 1-to-nsplitter 120, n sub-amplifier modules 130, an optional power/controlmodule 140, and a n-to-1 combiner 150.

Pre-amp 110 receives an input signal and drives the n sub-amplifiermodules 130 through splitter 120. In some embodiments, pre-amp 110functions as a buffer, presenting a small input load, and driving thelarger load of the splitter 120 parasitics and the n sub-amplifiermodule 130 load. In some embodiments pre-amp 110 can perform otherfunctions. For example, pre-amp 110 can perform processing functions,such as filtering the input signal or up-converting the input signal to,for example, an RF transmission frequency. Some embodiments do not havepre-amp 110.

Splitter 120 is configured to split the power from the input signal, andprovide substantially equal power and phase shift through inputelectrical paths to each of the n sub-amplifier modules 130. Splitter120 provides substantially equal power and phase shift through its inputelectrical paths by providing each path with substantially identicalgeometries and physical characteristics. The substantially identicalgeometries and physical characteristics result in the electricalcharacteristics of the paths being substantially identical. For example,an input signal with 0 dBm of power can be provided to splitter 120,which then provides ⅛ of the power to each of 8 sub-amplifier modulesless combiner losses.

The n sub-amplifier modules 130 include an array of n sub-amplifiermodules, electrically connected in parallel. The quantity n can be anynumber. In certain embodiments, n is an even number. The quantity n isdetermined at least by the power amplification desired and the poweramplification of each sub-amplifier module.

Power/control module 140 provides power and, in some embodiments,control signals to the n sub-amplifier modules. Power/control module 140is configured to provide substantially identical power and controlsignals to each of the sub-amplifier modules with n power and controlsignal paths each substantially identical to the others. In someembodiments, power/control module 140 has power conditioning circuitry,such as a filter and a load sensor.

Combiner 150 is configured to combine the power from each of thesub-amplifier modules 130 through output electrical paths withsubstantially equal power and phase shift, and provide the combinedpower to the output. Combiner 150 provides substantially equal power andphase shift through its output electrical paths by providing each pathwith substantially identical geometries and physical characteristics.For example, output signals with 40 dBm of power each, can be providedto combiner 150, which then provides 8 times the power to the poweramplifier output less losses from combiner 150.

FIGS. 2A and 2B are exploded perspective views of an example of a poweramplifier, power amplifier 200. Power amplifier 200 includes a housing210 with multiple lateral faces 220. Any number of faces 220 can beused. For example some embodiments have 4, 5, 6, 8, 10, or 12 faces 220.On some of the faces 220 is a sub-amplifier module 230. As shown in FIG.2A, each of the sub-amplifier modules 230 are connected to a poweramplifier input 240 via an input electrical path 250 on splitter 255.Similarly, as shown in FIG. 2B, each of the sub-amplifier modules 230are connected to a power amplifier output 260 via an output electricalpath 270 on combiner 275. Also shown in FIG. 2A is mounting plate 285optionally connected to the input end of housing 210 and/or to theoutput end of housing 220. In certain embodiments, one face 220 has apre-amplifier 280, and another face 220 has a power connector 290.

In some embodiments the faces 220 of the housing 210 include at leastone of copper, such as copper 100, copper 101, aluminum, such asaluminum 6063, aluminum 6061, magnesium, and silver.

FIGS. 2A and 2B show the signal path from power amplifier input 240 topower amplifier output 260. The input signal is provided to poweramplifier input 240, which is connected to RF splitter 255. RF splitter255 divides the input signal power, and provides the input signal withsubstantially equal power and phase shift through input electrical paths250 to each of the sub-amplifier modules 230. Each sub-amplifier module230 is arranged on one of a plurality of substrates forming the faces220. In some embodiments the substrate material includes at least one ofmolybdenum, copper tungsten, and a copper molybdenum alloy. In someembodiments, multiple sub-amplifier modules 230 are attached to a singlesubstrate. The sub-amplifier modules 230 amplify the input signal powerand drive power amplifier output 260 through output electrical paths 270of RF combiner 275. Combiner 275 is configured to combine the outputs ofthe sub-amplifier modules 230 at the power amplifier output 260 withsubstantially equal power and phase shift.

In some embodiments, the power amplifier also includes the input pre-amp280 positioned on one or more of the faces 220. In these embodiments,the power amplifier input 240 is connected to the pre-amp 280, and thepre-amp drives the input of the splitter 255. Pre-amp 280 receives aninput signal and drives the sub-amplifier modules 230 through splitter255. In some embodiments, pre-amp 280 functions as a buffer, presentinga small input load, and driving the larger load of the splitter 255parasitics and the load of the sub-amplifier modules 230. In someembodiments, pre-amp 280 can perform other functions. For example,pre-amp 280 can perform processing functions, such as filtering theinput signal or up-converting the input signal to, for example, an RFtransmission frequency. Some embodiments do not have the pre-amp 280.

In the embodiment shown in FIGS. 2A and 2B, one face 220 has the powerconnector 290. Power for one or more of the sub-amplifier modules 230and the pre-amp 280 can be provided through the power connector 290. Forexample, DC power of about 12 volts at about 1-5 Amps can be deliveredto each of the sub-amplifier modules 230 through the power connector290. In some embodiments, power connector 290 includes controlconnections which provide control signals to the sub-amplifier modules230 and/or the pre-amp 280.

Each face 220 is connected to other faces 220 so as to form housing 210having a central cavity. The central cavity can be used to route powersignals to the sub-amplifier modules 230. In some embodiments, thecentral cavity is provided with circuitry used for conditioning thepower signals, such as filtering and sequencing. In some embodiments,the central cavity is used to provide control signals for each of thesub-amplifier modules 230.

FIGS. 2A and 2B also show that power amplifier 200 has a mounting plate285 on the input end of power amplifier 200. Other embodiments have amounting plate 285 on both ends while still other embodiments havemounting plates 285 on both the input end and the output end of poweramplifier 200. The mounting plate connects to housing 210 and isconfigured to be connected to a surface on a structure configured toreceive one or more of the power amplifier 200. The structure canprovide a heat management system, such as a heat sink with a fan or aliquid cooling mechanism. In some embodiments, power amplifier 200 ismounted to a heat management system with a mounting plate 285 on boththe input end and the output end of power amplifier 200.

Accordingly, the heat generated by each sub-amplifier module 230 isconducted from each sub-amplifier module through the substrate to whichthe sub-amplifier module components are mounted, through splitter 255and combiner 275, to mounting plate(s) 285. From mounting plates 285 theheat is conducted to the heat management system to which mountingplate(s) 285 are mounted. The heat management system provides a heatpath from the mounting plate(s) 285 to the environment. In someembodiments, because of symmetry in splitter 255, housing 210, combiner275, and mounting plate(s) 285, the heat paths from the sub-amplifiermodules 230 to the environment are substantially identical. Havingsubstantially identical heat paths is particularly advantageous becausethe electrical properties of sub-amplifier modules 230 and thetransmission line properties of electrical input paths 250 andelectrical output paths 270 are partly dependent on temperature.Accordingly, having substantially identical heat paths provides forsubstantially identical temperatures at each point along the signal pathfrom power amplifier input 240 to power amplifier output 260.

In some embodiments mounting plates 285 are attached to housing 210 soas to hermetically seal the internal cavity. Various techniques forsealing can be used, such as a gasket, solder, a weld, a laser weld, andepoxy. Other sealing techniques can also be used.

In the embodiment of FIGS. 2A and 2B, because the power amplifier input240 and the power amplifier output 260 are aligned with the same face220, the power amplifier input 240 and the power amplifier output 260have substantially the same orientation with respect to the remainder ofthe power amplifier 200. In some embodiments the power amplifier input240 and the power amplifier output 260 do not have the same orientationwith respect to the remainder of the power amplifier 200, and can havesubstantially opposite orientation, where the power amplifier input 240is aligned with a first face 220, and the power amplifier output 260 isaligned with an opposite face. Other arrangements are also possible.

In some embodiments with 8 sub-amplifier modules, the maximum phasedifference between the various signal paths from power amplifier input240 to power amplifier output 260 is less than about 5 degrees at 18GHz. In some embodiments with 8 sub-amplifier modules, the difference isless than about 2 degrees at 18 GHz.

The following table shows actual performance data of an embodimentdriving a 50 Ohm load.

Signal Input Output Input Output Frequency Power_(sat) Power_(sat)Power_(1 dB) Power_(1 dB) Gain_(1 dB) (GHz) (dBm) (dBm) (dBm) (dBm) (dB)6 28.7 47.0 24.3 45.4 20.9 7 28.5 45.9 23.7 43.5 20.5 8 29.2 45.2 24.543.6 19.1 9 28.6 46.9 26.0 46.5 21.1 10 28.2 47.4 26.0 47.1 23.5 11 31.347.7 27.5 47.0 22.2 12 31.4 47.2 19.5 46.9 20.3 13 31.0 46.4 30.0 46.019.4 14 28.5 45.5 2737 44.7 20.3 15 27.9 46.0 27.4 45.7 22.2 16 27.946.0 27.4 45.8 22.3 17 27.3 44.9 27.6 44.6 21.0 18 26.7 44.4 26.0 44.121.9

where:

Input Power_(sat) is the power of the input signal such that the outputof the amplifier is saturated (i.e. at a maximum);

Output Power_(sat) is the power of the output signal of the amplifierwhen saturated (i.e. at a maximum);

Input Power_(1 dB) is the power of the input signal such that the outputof the amplifier is 1 dB down from where it would be if the amplifierwas performing with small signal gain;

Output Power_(1 dB) is the power of the output signal of the amplifier 1dB down from where it would be if the amplifier was performing withsmall signal gain; and

Gain_(1 dB) is the Gain when the power of the output signal of theamplifier is 1 dB down from where it would be if the amplifier wasperforming with small signal gain.

FIG. 3 is a perspective view of an embodiment of a component 300. Thestructure and features of component 300 apply symmetrically to its useas either an RF combiner or an RF splitter. For ease of discussioncomponent 300 will be described as a combiner 300, however, the featuresdiscussed regarding combiner 300 can be applied to a splitter having thesame structure by exchanging the function of the input and the output.

Combiner 300 has a plurality of inputs 310 which are connected to asingle output 320 via a plurality of electrical paths 330. Each of theelectrical paths 330 is shielded by at least one sidewall 340 on eachside of the electrical input path 330.

Each of the inputs 310 can be driven by a separate driver. Combiner 300combines the input power from each of the inputs 310 at the output 320,where the powers of all of the inputs 310 are combined by vectoraddition. Each of the inputs 310 are connected to the output 320 throughan electrical path 330. In order to minimize loss in combiner 300, theelectrical paths 330 are electrically substantially identical so as toavoid combining signals of various phase and amplitude at the output.Accordingly, the parasitic capacitance, inductance, and resistance ofeach of the electrical paths 330 are substantially identical, and thetransmission line characteristics of the electrical paths 330 aresubstantially identical.

The combiner 300 having electrically substantially identical electricalpaths 330 is achieved in part by forming electrical paths 330 such thatthey are physically substantially identical. As shown in FIG. 3,although there are variations in symmetry, electrical paths 330 arephysically substantially the same length, and, as electrical propertiesare substantially independent of the symmetry variations, electricalpaths 330 are electrically substantially identical in construction. Soas to provide advantageous connections to components driving the inputs310 and to one or more components at the output 320, the inputs 310, theelectrical paths 330, and the output 320 are substantially in the sameplane. The planar nature of the combiner allows for convenient low-lossconnections to both inputs and output. This is especially advantageouswhen the transmission lines from the input components and/or the outputcomponent are configured to be connected to the combiner 300 insubstantially the same plane as the inputs 310 and the output 320.

As shown in FIG. 3, in one embodiment, the electrical paths from each ofthe inputs 310 to the output 320 have various features. These featuresare manufactured to insure that the various paths are substantiallyidentical, and provide desired impedance of each of the paths. As may beseen, one path is labeled with sections Z0 to Z9. The electrical pathsof sections Z0 through Z4 form a two way combiner. The electrical pathwithin section Z5 forms an e-field compensator. Section Z7 has acircular current spreader.

The electrical paths within sections Z0 through Z4 form a two waycombiner, which combines the signals from the center of the combiner 300and bring them to the output 320. In some embodiments, the same or asimilar structure may be used to combine the inputs and bring them tothe center of the combiner 300. However, as shown, this may beaccomplished by the features shown in sections Z9 through Z5.

Section Z5 has an e-field compensator. Such a compensator effectivelycompensates for the RF imbalance which occurs due to the change indirection that the current experiences in going from section Z6 throughZ5 to Z4. The electrical path within section Z5 balances the electricfields and the current as it is conducted from section Z6 through Z5 toZ4. The electrical path of section Z5 causes the current in sections Z7through Z4 to be substantially equal.

Section Z7 has a circular current spreader. The circular spreader hasthe effect of spreading the current as it enters the circle, making iteasier for the current to combine equally from each of the section Z8branches.

A second aspect which helps to achieve electrically substantiallyidentical electrical paths 330 is that each of the electrical paths 330is shielded by at least one sidewall 340 on each side of the electricalinput path 330. As shown in FIG. 3, combiner 300 includes sidewalls 340which form channels within which the electrical paths 330 are routed.The sidewalls 340 are formed such that the parasitic capacitancesbetween each electrical path 330 and the adjacent sidewalls 340 aresubstantially identical to the parasitic capacitances between each ofthe other electrical paths 330 and the adjacent sidewalls 340. Incertain embodiments, the transmission line characteristics of theelectrical input path 330 are advantageously affected when the sidewalls340 are positioned so as to be less than ¼ wavelength from theelectrical input path 330.

Because the combiner 300 is symmetric about a line from the output 320through the center, when connected to a power amplifier such as thatshown in FIGS. 2A and 2B, the direction of the output 320 can be one oftwo optional opposite orientations. Accordingly, when the poweramplifier has a combiner 300 at the output, and a similar structure as asplitter at the input, the input and output can have substantiallyidentical or substantially opposite orientation.

The embodiment of FIG. 3 has eight electrical paths 330 and one output320. Other embodiments have other configurations. For example, someembodiments have four or another number of electrical paths 330. Someembodiments have more than one output 320. At each junction ofelectrical paths 330 in the embodiment of FIG. 3, two electrical paths330 combine. In other embodiments, three or more electrical paths 330combine at some or all junctions.

FIG. 4 is a schematic diagram of an example of a sub-amplifier module.Sub-amplifier module 400 has an input splitter 410, two sub-amplifiers420, and an output combiner 430.

In one embodiment, input splitter 410 and output combiner 430 eachinclude a hybrid combiner network. Other embodiments use other combinerand/or splitter structures. An advantageous aspect of the hybridcombiner network is that the input and output impedance load of thesub-amplifier module 400 does not depend on the condition of thesub-amplifiers 420. When a number of sub-amplifier modules are connectedto an input splitter and/or an output combiner, such as in the poweramplifier 200 of FIGS. 2A and 2B, if the input and output load of one ofthe sub-amplifier modules significantly changes, significant reflectionsand/or oscillations can occur. In addition to losses causing a drop inpower efficiency and a drop in VSWR performance, when the reflectionsand/or oscillations are significant enough, the sub-amplifiers can bedamaged. Such damage can cause further changes in input and/or outputimpedance, which can further cause reflections and/or oscillations whichcan cause further damage to other sub-amplifiers. The result can be thatsome or all of the amplifiers become inoperable. This situation issubstantially avoided by using a hybrid combiner. Because thesub-amplifier module 400 presents a load dependent on the passivedevices of the hybrid combiner, rather than the active sub-amplifiers420, if a sub-amplifier 420 in one sub-amplifier module becomes damaged,the load of the damaged sub-amplifier module presented to the othersub-amplifier modules remains substantially unchanged. As a result, theother sub-amplifiers remain substantially remain unaffected, and thepower amplifier continues to function.

The sub-amplifiers 420 can be any RF amplifying devices configured foruse in such an application. For example, in one embodiment sub-amplifier420 is a GaAs MMIC such as a TGA2501-EPU available from TriQuintSemiconductor, Inc. In some embodiments, the sub-amplifiers 420 aresubstantially identical. In certain embodiments the sub-amplifiers 420each include an input used to adjust electrical characteristics of thesub-amplifiers 420, such as gain and bandwidth. In some embodiments, theinput provides a gate bias voltage for the sub-amplifier 420, forexample a negative gate bias voltage of about −0.7 volts DC can beprovided to a GaAs sub-amplifier.

Flexible transmission lines can be used to electrically connect thesplitter 255 to the sub-amplifier modules 230 and electrically connectthe sub-amplifier modules 230 and the combiner 275 of FIGS. 2A and 2B. Atransmission line for such use is shown in FIGS. 5A and 5B, which areillustrations of perspective views of an example of a flexibletransmission line. Transmission line 500 includes a flexible substrate510, a conductor 520, and screw holes 530.

The flexible substrate 510 and conductor 520 are configured to providean insertion loss of less than about 0.2 dB when the flexible substrateis bent about 90 degrees with a radius of curvature less than about ⅛inch. In some embodiments the material used can be Teflon coated copperdouble clad duriod laminate similar to Rogers R/flex 3000. The materialis bent with the grain of the material in order to provide a bend thatis flexible and will not break with expansion or vibration.

The screw holes 530 are configured to be used to secure the flexibletransmission line 500 to one or more substrates. A connection 550between transmission line 500 and a substrate 540 is shown in FIG. 5C.Connection 550 includes a first connector 552 which has screws 555securing and electrically connecting the transmission line 500 to thesubstrate 540, and a second connector 554 securing and electricallyconnecting conductor 520 to a conductor 560 associated with substrate540. The second connector 554 can include a conductor that is attachedto conductors 520 and 560 by various mechanisms, such as, but notlimited to a weld or with solder.

In some embodiments, connection 550 provides a substantially coplanarinterface between conductors 520 and 560. This is advantageous asreflections at the junction between conductors 520 and 560 are reducedbecause of the coplanar geometry.

In some embodiments connection 550 provides an electrical matchingnetwork between conductors 520 and 560. In such embodiments, screws 555are conductive and contact a ground signal. Accordingly a parasiticcapacitance is formed between the screws 555 and the conductors 520 and560. The parasitic capacitance and the inherent inductance of the secondconnector 554 collectively provide a matching network.

FIG. 5D is a schematic diagram illustrating the matching network. Thematching network has a series inductance 556 from the second connector554, parallel capacitance 557 from the first connector 552 to the secondconnector 554 and to conductors 520 and 560, and inductances 558 toground. The matching network can be tuned by design. The characteristicsof the matching network are determined at least in part by thedimensions of second connector 554, the spacing between the firstconnector 552 and second connector 554, and the spacing between thefirst connector 552 and the conductors 520 and 560. In some embodimentsthe inductance of the second connector 554 is less than about 0.05 nH.In some embodiments the remaining two inductors 558 are approximately0.002 nH. The overall output impedance is 50 ohms.

Referring again to FIGS. 2A and 2B, power amplifier 200 can include anRF splitter 255 and RF combiner 275 such as the combiner 300 describedabove with reference to FIG. 3. Power amplifier 200 can also includesub-amplifier modules such as sub-amplifier module 400 described abovewith reference to FIG. 4. Power amplifier 200 can further includeflexible transmission lines such as flexible transmission line 500described above with reference to FIG. 5.

As described above, some embodiments include a central cavity. Thecentral cavity can be used to route power signals to the sub-amplifiermodules 230.

In some embodiments the central cavity is provided with circuitry usedfor conditioning the power signals, such as filtering and sequencing.For example, some embodiments of sub-amplifier modules 230 require thatthe power signals turn on and turn off in a specified sequence.Circuitry which provides power supply sequencing can be positionedwithin the cavity. For example, a MAX881REUB from Maxim IntegratedProducts can be used. In some embodiments the circuit provides powersupply sequencing for all of the sub-amplifier modules 230. In someembodiments, each sub-amplifier module 230 has a dedicated powersequencing circuit. The dedicated power sequencing circuit is configuredto monitor the application of the various power signals and to apply thepower signals to the corresponding sub-amplifier module 230 in theproper sequence. In such embodiments, the dedicated power sequencingcircuit can be positioned within the cavity on the internal surface ofthe face 220 on which the corresponding sub-amplifier module 230 ispositioned. The dedicated power sequencing circuit can be produced on aPCB, which is subsequently mounted on the internal surface or oppositeside of the face 220 on which the corresponding sub-amplifier module 230is positioned.

In some embodiments the central cavity is similarly used to providepower conditioning for each of the sub-amplifier modules 230. Variouspower line filters and regulators can be positioned in the cavity toprovide clean power to the sub-amplifier modules 230 collectively orindividually.

In some embodiments the central cavity is used to provide controlsignals for each of the sub-amplifier modules 230. Some sub-amplifiermodules 230 have adjustable amplification characteristics, such as gainand bandwidth. The control signals for such adjustment can be providedwithin the cavity to the sub-amplifier modules 230 collectively orindividually. For some sub-amplifier modules 230, the control signalsinclude a gate bias voltage signal.

In some embodiments the electrical connection between the powersequencing circuit, the power conditioning circuitry, and/or the controlsignals and the corresponding sub-amplifier module 230 is provided by ascrew or other conductive securing element, by which the circuit PCB ismounted to the housing 210. For example, on the cavity side, the screwcan be configured to hold the PCB to the housing 210 and to beelectrically connected to a power signal output of the sequencing orconditioning circuit, with, for example, a bond wire. The screw extendsthrough a portion of the housing 210, and electrically connects to thesub-amplifier module 230 with, for example, a second bond wire. In suchembodiments, the screw or other attachment functions as a via. In someembodiments, the screw has an external surface which includes anelectrically non-conductive material, such as plastic or nylon to coverall or a part of the external surface. In some embodiments, the entirescrew is conductive, and the screw hole in the housing and the PCB areeither non-conductive or otherwise provided with electrical isolation.

Such a screw or securing element can, in general, be used tomechanically attach and electrically connect other electronic componentsto one another. For example a PCB in a system can be mechanicallyattached to the rest of the system with securing elements which providean electrical connection for the PCB to a ground plane.

In some embodiments, the securing element includes a filter toelectrically condition the signal.

FIG. 6 is a diagram showing a perspective view of an example of acombined power amplifier having four power amplifiers 610, such as thepower amplifier 200 shown in FIGS. 2A and 2B. As shown, the four poweramplifiers 610 are connected with a combiner 620 and a splitter 630. Insome embodiments, power amplifiers 610 have one or more of the poweramplifier aspects described above. Similarly, combiner 620 and splitter630 can have one or more of the combiner aspects described above.

Power amplifiers 610 are each arranged such that the input connector andoutput connector of each power amplifier 610 is oriented toward a pointcentral to the four power amplifiers 610. Accordingly, each of the inputconnectors can conveniently be connected to the central splitter 630.Similarly, each of the output connectors can conveniently be connectedto the central combiner 630. As a result, the four power amplifiers 610are electrically connected in parallel, and the power amplification ofthe combined power amplifier 600 is approximately four times that ofeach power amplifier 610 alone.

In other embodiments, other numbers of power amplifiers 610 are used.For example, in some embodiments two power amplifiers 610 are used, andthe splitter 630 and combiner 620 are configured for two poweramplifiers 610. In some embodiments more than four power amplifiers 610are used. In some embodiments an odd number of power amplifiers areused. In some embodiments, two or more combined power amplifiers 600 areconnected by yet another combiner and another splitter (not shown).

In order to achieve similar results, the combiner 620 and the splitter630 have similar features as the combiner 300 described above withreference to FIG. 3. In some embodiments the combiner 620 and thesplitter 630 may be configured for higher power than the combiner 300.

FIG. 7 is an exploded perspective view of a combined power amplifier 700having four power amplifiers 710 connected with a combiner 720, asplitter 730, and plates 740. In some embodiments power amplifiers 710have one or more of the power amplifier aspects described above.Similarly, combiner 720 and splitter 730 can have one or more of thecombiner aspects described above. In some embodiments the combiner 720and the splitter 730 may be configured for higher power than thecombiner 300.

In the embodiment shown in FIG. 7, power amplifiers 710 are arrangedclose to one another so as to reduce conductor lengths. The combiner 720and the splitter 730 are configured to combine/split the signals for allof the sub-amplifier modules of the power amplifiers 710. In oneembodiment, combiner 720 and splitter 730 are configured tocombine/split signals for 32 sub-amplifier modules. Other embodimentsare configured for other numbers of sub-amplifier modules. In addition,combiner 720 and splitter 730 provide an integrated path from thesub-amplifier modules to the input or the output of the combined poweramplifier 700, removing the need for, and loss which occurs withconnectors.

Some embodiments of the combined power amplifier 700 can be configuredto output a signal of about 4 GHz to about 40 GHz frequency and power ofat least about 30 Watts.

For terminating transmission lines at RF devices, a load resistor may beplaced at the connection of the transmission line to the RF device. Forexample, the hybrid combiner 410 of FIG. 4 requires a resistortermination load. FIG. 8 is a diagram showing a perspective view of anexample of an RF load for such an application. The RF load 800 issubstantially planar and has relatively high surface area over which theresistive material is spread, allowing for effective heat transfer andminimal hot spot generation in the resistive material. Accordingly, RFload 800 is capable of operating under high power and high frequencyconditions. For example, some embodiments present a substantiallyconstant 50 Ohm impedance at frequencies up to about 20 GHz with asignal of about 100 watts. RF load 800 has connector 810, interface 820,load resistor 830 and ground terminal 840, which has holes 850 which canbe used to attach the RF load 800 to a substrate.

Connector 810 is formed with a conductive material, such as goldConnector 810 functions as a signal terminal of the RF load, may beconnected to a signal transmission line, such as an input or an outputof the combiner 300 of FIG. 3. Interface 820 is also formed of aconductive material, such as gold and contacts load resistor 830 at theperimeter of the semicircle. Load resistor 830 is formed of anelectrically resistive material, such as tungsten. Load resistor 830contacts the ground terminal 840 at the outer perimeter of the loadresistor semicircle. The substantially circular nature of load resistor830 provides a large surface which provides for wide bandwidth and highfrequency operation, as well as advantageous heat conductanceperformance. Ground terminal 840 is connected to a system ground. Insome embodiments the holes 850 may be used to attach the RF load 800 toa housing, such as housing 210 of FIG. 2, which may be a system ground.The underside (not shown) of RF load 800 may comprise a conductivecoating for soldering, and for conducting the system ground at theattachment to the ground terminal 840. Holes 850 may provide pathwaysfor conductive vias connecting the system ground to the ground terminal.

FIG. 9 is a perspective view of attachment device 900 which is anembodiment of an attachment for an electrical component. Such anattachment device 900 may be used to secure the sub-amplifier modules230 of FIG. 2 to the substrates of the power amplifier 200. In thisapplication the attachment device 900 acts as a mechanical attachment,an electrical via, and an electrical filter.

The attachment device 900 comprises threaded securing element 910,conductor 920, insulator 930, and seal 940. When assembled, insulator930 is inside a cavity in the securing element 910, and conductor 920extends through insulator 930 such that conductor head 925 is exposed onone side of securing element 910 and the opposite end of conductor 920is exposed on the other side of securing element 910.

In the embodiment of FIG. 9, one end of conductor 920 has a head 925,which is configured to have a flat surface. The flat surface can beconfigured to be electrically connected to an electrical componentthrough a wire bonded to the flat surface. The other end of conductor920 is configured as a pin which can be inserted into a socket so as tomake an electrical connection to another or the same electricalcomponent. In other embodiments, either or both ends of conductor 920can be configured to make electrical connections to one or moreelectronic components using any connection mechanism. For example, oneor both ends may comprise a socket, or a solder bump. Other mechanismscan also be used.

In some embodiments, seal 940 forms a hermetic seal such that the cavityin securing element 910 is sealed. In some embodiments, seal 940comprises a glass to metal seal.

If securing element 910 is conductive, a capacitor is formed betweenconductor 920 and securing element 910. The capacitance of the capacitorcan be designed through dimensions of seal 940. A smaller seal 940 willresult in a larger capacitance. The material of seal 940 may also beadjusted to affect the capacitance. The capacitance of the capacitor canalso be designed through various dimensions of conductor 920, ofsecuring element 910, and of insulator 930. For example, if conductor920 and securing element 910 are longer, the capacitance between them isincreased. Also, if conductor 920 is thicker and insulator 930 isthinner, the capacitance is greater. Other variations may also be made.The dielectric material of insulator 930 may also be adjusted to affectthe capacitance. In some embodiments insulator 930 may be covered oneither the inside or the outside or both with a conductive material,such as gold, to better control the dielectric between the conductiveplates of the capacitor.

Through variations in at least one of the dimensions, the material, andthe construction of conductor 920, the inductance and resistance ofconductor 920 can be tuned. For example, a thinner conductor 920 willhave higher inductance and higher resistance.

Also, in some embodiments, attachment device 900 can be configured so asto receive an inductance increasing element. For example, insulator 930can extend beyond either or both ends of securing element 910, such thata ferrite bead can be placed over it.

Because of the inductance, resistance, and capacitance, attachmentdevice 900 filters electrical signals passing through it. The filteringcharacteristics of attachment device 900 can be tuned by adjusting theinductance, resistance, and capacitance as described above.

While specific blocks, sections, devices, functions and modules may havebeen set forth above, a skilled technologist will realize that there aremany ways to partition the system, and that there are many parts,components, modules or functions that may be substituted for thoselisted above.

While the above detailed description has shown, described, and pointedout novel feature as applied to various embodiments, it will beunderstood that various omissions, substitutions, and changes in theform and details of the device or process illustrated can be made bythose skilled in the art without departing from the spirit of theinvention. As will be recognized, the present invention can be embodiedwithin a form that does not provide all of the features and benefits setforth herein, as some features can be used or practiced separately fromothers.

1. An RF load comprising: a resistive material; and first and secondterminals, each terminal comprising a curved interface to the resistivematerial.
 2. The RF load of claim 1, further comprising pathways forconductive vias.
 3. The RF load of claim 2, wherein the pathways areconfigured to connect the RF load to a ground source.
 4. The RF load ofclaim 1, wherein the RF load is configured to operate at a substantiallyconstant 50 Ohms with a signal of at least about 20 GHz frequency andpower of at least 100 Watts
 5. The RF load of claim 1, wherein theresistive material is substantially planar.
 6. The RF load of claim 5,wherein the first and second terminals and the resistive material aresubstantially planar.
 7. The RF load of claim 1, wherein the resistivematerial comprises tungsten.
 8. The RF load of claim 1, wherein thefirst and second terminals comprise gold.
 9. The RF load of claim 1,wherein the curved interface of the resistive material and the firstterminal is of different length as the curved interface of the resistivematerial and the second terminal.
 10. The RF load of claim 1, whereinthe curved interface of the resistive material and the first terminal issubstantially semicircular.
 11. The RF load of claim 10, wherein thecurved interface of the resistive material and the second terminal issubstantially semicircular.
 12. An RF device comprising a RF load,wherein the RF load comprises: a resistive material; and first andsecond terminals, each comprising a curved interface to the resistivematerial.
 13. The RF device of claim 12, the RF load further comprisingpathways for conductive vias.
 14. The RF device of claim 12, wherein theRF load is configured to operate at a substantially constant 50 Ohmswith a signal of at least about 4 GHz to about 40 GHz frequency andpower of at least about 30 Watts.
 15. The RF device of claim 12, whereinthe first and second terminals and the resistive material of the RF loadare substantially planar.
 16. The RF device of claim 12, wherein theresistive material of the RF load comprises tungsten.
 17. The RF deviceof claim 12, wherein the first and second terminals of the RF loadcomprise gold.
 18. The RF device of claim 12, wherein the curvedinterface of the resistive material and the first terminal of the RFload is of different length as the curved interface of the resistivematerial and the second terminal of the RF load.
 19. The RF device ofclaim 12, wherein the curved interface of the resistive material and thefirst terminal of the RF load is substantially semicircular.
 20. The RFload of claim 19, wherein the curved interface of the resistive materialand the second terminal of the RF load is substantially semicircular.